We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from 5 × 1016 to 1019 cm−3. Contained here are the associated MBE growth logs, AFM, XRD and RHEED characterizations of the S-MBE samples.
| AFM | ||
|---|---|---|
| Item | Type | File |
| AFM Data | zipped folder | AFM Data.zip |
| MBE Growth | ||
| Item | Type | File |
| MBE Growth Logs | zipped folder | MBE Growth Logs.zip |
| RHEED | ||
| Item | Type | File |
| RHEED Data | zipped folder | RHEED Data.zip |
| XRD and or XRR | ||
| Item | Type | File |
| Si-doped Ga2O3 | zipped folder | Si-doped Ga2O3.zip |
| SiO2 Calibrations | zipped folder | SiO2 Calibrations.zip |
| ITO1133_RC_TAD_again.xrdmp | xrdmp | ITO1133_RC_TAD_again.xrdmp |
| ITO1133_RC_TAD.xrdml | xrdml | ITO1133_RC_TAD.xrdml |
| GaO_Al2O3_006-ReidandEthan.xrdml | xrdml | GaO_Al2O3_006-ReidandEthan.xrdml |
| ITO1133_RC_TAD_again.xrdml | xrdml | ITO1133_RC_TAD_again.xrdml |