Authors: Yorick A. Birkhölzer1, Anna S. Park1,2, Noah Schnitzer1,3, Jeffrey Z. Kaaret4, Benjamin Z. Gregory1, Tomas A. Kraay1, Tobias Schwaigert1,2, Matthew R. Barone1,2, Brendan D. Faeth2, Felix V.E. Hensling5, Iris C.G. van den Bosch6, Ellen M. Kiens6, Christoph Baeumer6, Enrico Bergamasco7, Markus Grüninger7, Alexander Bordovalos8,9, Suresh Chaulagain8,9, Nikolas J. Podraza8,9, Waldemar Tokarz10, Wojciech Tabis10, Matthew J. Wahila11, Suchismita Sarker12, Christopher J. Pollock12, Shun-Li Shang13, Zi-Kui Liu13, Nongnuch Artrith14, Frank M.F. de Groot14, Nicole A. Benedek1, Andrej Singer1, David A. Muller2,3,4, Darrell G. Schlom1,2,3,15
Author affiliations: 1:Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA 2:Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York 14853, USA 3:Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA 4:School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA 5:Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany 6:MESA+ Institute for Nanotechnology, University of Twente, 7500 AE, Enschede, The Netherlands 7:Institute of Physics II, University of Cologne, 50937 Cologne, Germany 8:Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, USA 9:Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, Ohio 43606, USA 10:Faculty of Physics and Applied Computer Science, AGH University of Krakow, 30-059, Krakow, Poland 11:Analytical and Diagnostics Lab, Binghamton University, State University of New York, Binghamton, New York 13902,USA 12:Cornell High Energy Synchrotron Source, Wilson Laboratory, Cornell University, Ithaca, New York 14853, USA 13:Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802,USA 14:Debye Institute for Nanomaterials Science, Utrecht University, 3584 CG, Utrecht, The Netherlands 15:Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
Here we share the log files that were generated during the epitaxial growth of TaO2 thin films on r-plane sapphire by suboxide MBE. Additionally, we also share AFM and RHEED images as well as XAS, XPS, XRD, and STEM-EELS data.