Dataset: Growth of Conductive Si-Doped α-Ga₂O₃ by Suboxide Molecular-Beam Epitaxy

Authors: J. Steele ¹, J. Chen ², T. Burrel³, N.A. Pieczulewski ¹, D. Bhattacharya ⁴, K. Smith ⁴, K. Gann ¹, M.O. Thompson ¹, H.G. Xing ^1,4,5, D. Jena ^1,4,5, D.A. Muller ^5,6, M.D. Williams ³, M.K. Indika Senevirathna ³, D.G. Schlom ^1,5,7,a

Author affiliations:
¹:Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
²:Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York 14853, USA
³:Department of Physics, Clark Atlanta University, Atlanta, Georgia 30314, USA
⁴:School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
⁵:Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
⁶:School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
⁷:Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
^a:Author to whom correspondence should be addressed: schlom@cornell.edu

Complete growth logs referenced in Table 1 of the associated publication found at: https://doi.org/10.1063/5.0299750