Dataset: Epitaxial growth of the first two members of the Ba_n+1In_nO_2.5n+1 Ruddlesden-Popper homologous series

Paper doi:
1: https://doi.org/10.1116/6.0002205

Authors: Felix V. E. Hensling¹ Michelle A. Smeaton¹ Veronica Show² Kathy Azizie¹ Matthew R. Barone^1,2 Lena F. Kourkoutis^3,4 Darrell G. Schlom^1,4,5

Author affiliations:
¹: Department of Materials Science and Engineering - Cornell University
²: Platform for the Accelerated Realization Analysis and Discovery of Interface Materials (PARADIM) - Cornell University
³: School of Applied and Engineering Physics - Cornell University
⁴: Kavli Institute at Cornell for Nanoscale Science
⁵: Leibniz-Institut für Kristallzüchtung

The Ba_𝑛+1In_𝑛O_2.5𝑛+1 films were grown by suboxide molecular-beam epitaxy where the indium is provided by a molecular beam of indium-suboxide [In₂O (g)]. To facilitate ex situ characterization of the highly hygroscopic barium indate films, a capping layer of amorphous SiO₂ was deposited before air exposure. The structural quality of the films was assessed by x-ray diffraction and reflective high-energy electron diffraction The data presented here represents the MBE growth logs and the corresponding structural characterization in the form of x-ray diffraction and reflective high-energy electron diffraction.