Dataset: Growth of a-plane BaTiO₃ on a-plane β-Ga2O3 by molecular-beam epitaxy

Authors: Kathy Azizie ¹, Naomi A. Pieczulewski ¹, Nicholas A. Parker ¹, Jian V. Li ^2,3, Nolan S. Hendricks ⁴, Kyle J. Liddy ⁴, Yorick A. Birkhölzer ¹, Eric A. Welp ⁵, Luke Omodt ⁵, Thaddeus J. Asel ², Shin Mou ², David A. Muller ^6,7, Darrell G. Schlom ^1,6,8

Author affiliations:
¹:Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
²:Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson Air Force Base, Ohio 45433, USA
³:Core4ce, Fairborn, Ohio 45324, USA
⁴:Air Force Research Laboratory, Sensors Directorate, Wright Patterson Air Force Base, Ohio 45433, USA
⁵:Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials, Cornell University, Ithaca, New York 14853, USA
⁶:Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
⁷:School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
⁸:Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany

Here we share the epitaxial growth files of single-phase (100) BaTiO3 films on (100) β-Ga2O3 substrates at substrate temperatures ranging from 600 to 700 °C using molecular-beam epitaxy. As well as characterization of the resulting thin films by RHEED, AFM, and XRD.