Dataset: Molecular beam epitaxy of KTaO3

Paper doi:
1: https://doi.org/10.1116/6.0002223

Authors: Tobias Schwaigert^1,2 Salva Salmani-Rezaie^3,4 Matthew R. Barone[1^1,2 Hanjong Paik^1,5,6 Ethan Ray¹ Michael D. Williams⁷ David A. Muller^3,4 Darrell G. Schlom^1,2,4,8 Kaveh Ahadi^9,10,a

Author affiliations:
¹: Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York 14853
²: Department of Materials Science and Engineering, Cornell University, Ithaca New York 14853
³: School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
⁴: Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853
⁵: School of Electrical & Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019
⁶: Center for Quantum Research and Technology, University of Oklahoma, Norman, Oklahoma 73019
⁷: Department of Physics, Clark Atlanta University, Atlanta, Georgia 30314
⁸: Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
⁹: Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27265
¹⁰: Department of Physics, North Carolina State University, Raleigh, North Carolina 27695
^a: Electronic mail: kahadi@ncsu.edu

Here, we demonstrate growth of high-quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 contained in a conventional effusion cell as well as an electron-beam-heated tantalum source. Excess potassium and a combination of ozone and oxygen (10% O3 + 90% O2) were simultaneously supplied with the TaO2 (or tantalum) molecular beams to grow the KTaO3 films.